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RF Sensor with FabGuard Provides Real-time Plasma Process Analysis to Significantly Reduce Process Variability
INFICON RF sensor technology provides highly accurate, broadband, frequency discriminant RF measurement for semiconductor processing tools. This RF data provides detailed insight on actual plasma conditions of both process development and production process problems to significantly reduce process variability. The latest in its suite of advanced process control in situ sensors, this non-intrusive in-line cable mount RF sensor combines with FabGuard Sensor Integration and Analysis System to offer critical diagnostic information, e.g. accurate chamber and process power and impedance measurement, root cause analysis of faults (such as matching network problems), process fingerprinting for chamber matching, and wafer metrology modeling in PVD, CVD and etch applications.
INFICON RF sensor technology with FabGuard generates highly accurate models that predict wafer metrology results by measuring and performing analysis on fundamental and harmonic voltages and currents including phase angle measurements, so engineers have the ability to control actual wafer results on every wafer processed. Now FabGuard one-of-a-kind, powerful algorithm capability combines with RF sensor technology to significantly improve repeatability, stability, and accuracy of semiconductor processes, based on real-time measurements and correlation delivered through an easy-to-interpret user interface.
Applications
CVD
- Wafer metrology modeling (film stress, film thickness)
- Active power control of the true process chamber delivered power
- FDC (e.g. plasma instability, charging)
- Chamber matching (RF fingerprint)
PVD
- Wafer metrology modeling (resistivity)
- FDC
- Chamber matching (RF fingerprint)
Etch
- Wafer metrology modeling (etch rate)
- Active power control of the true process chamber delivered power
- FDC
- Chamber matching (RF fingerprint)
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